Mouser has signed an exclusive deal to be the global distributor for GaN Systems to distribute their range of Gallium Nitride high power transistors.
The products available from Mouser Electronics, feature exceptionally low on-resistance and negligible charge storage. They enable switching efficiencies well in excess of the present silicon based solutions and offer benefits for switching power supply designs, inverters, hybrid and electric vehicle inverters, battery management and power factor correction.
GaN’s Island Technology is the core of GaN Systems IP, allowing cell layouts for high-current die performance that maximise wafer yields. This reduces the size of the transistor, increasing performance while reducing the cost. GaNPX packaging uses no bond wires which results in lower inductance, low thermal resistance, and higher reliability, in a transistor package so small is it not much bigger than the die itself.
Initial products distributed by Mouser Electronics will include the G561008 enhancement mode transistor, a 100V 150°C device capable of handling 80 Amps of continuous current, and an RDS(ON) as low as 5.6mΩ. The GaN G566508 is a 650V enhancement mode transistor capable of operating at 150°C. It can handle 34 Amps continuous current and boasts an RDS(ON) of 41mΩ.
The devices target efficient power conversion for consumer appliances, data center server racks, solar, wind and smart-grid, electric and hybrid vehicles, as well as high efficiency power supply applications.