Mouser Electronics has added the D3 Semiconductor line of super junction power MOSFETs to its global line card. As part of the agreement, Mouser now stocks D3 Semi’s line of 650V superjunction power MOSFETs, which are designed for a variety of demanding uses, including enterprise computing, power supplies, motor control, lighting and other challenging power management applications.
The MOSFETs are designed using the D3 Semi’s unique +FET super junction technology — an innovative approach that fuses the power and efficiency of super junction architectures with mixed-signal precision.
To afford the highest possible level of performance and reliability, each +FET super junction power MOSFET in the D3 Semi portfolio targets a 650V node, which helps improve power densities of applications traditionally served by IGBTs such as inverters and motor drives.
The +FET super junction power MOSFETs feature an ultra-low on-state resistance (RDS-ON) ranging from 32 milliohm to 1000 milliohm for improved performance in low-frequency applications, as well as fast-switching capabilities that enable the devices to perform rapid transfers of the gate charge in a short period of time.
Each device in the family is also 100 percent avalanche tested at the industry’s highest avalanche current levels during production to ensure the most robust solution for even the most demanding applications.
The devices also meet the JESD 22 standard for electrostatic discharge (ESD) performance and are high temperature reverse bias (HTRB) stress tested at over 3,000 hours.
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