The new photocouplers PS9332L and PS9332L2 from Renesas Electronics have an integrated insulated-gate bipolar transistor protection function. They feature high-speed switching 20% faster than conventional Renesas products and guaranteed high-temperature operation. Rutronik distributes the photocouplers in a compact 8-pin SDIP (shrink dual inline package).
PS9332L and PS9332L2 consist of a gallium-aluminum-arsenide LED, photo detector IC, and an IGBT protection circuit. They drive the gate of an IGBT device while at the same time providing an integrated protection function to prevent destruction due to malfunction of the IGBT. Integrating the protection circuit into the photocoupler simplifies system design and enables the system to be more compact overall. Despite the integrated active Miller clamp function, the photocouplers come in a compact 8-pin SDIP package. This provides a 40% reduction in mounting area compared with an 8-pin DIP. The package is available with two lead frame options. The PS9332L offers 7mm outer creepage, whereas the PS9332L2 offers 8mm.
Thanks to Renesas’ exclusive BiCMOS process, the photo detector IC allows low parasitic capacitance, shorter delay time (tPHL, tPLH = 200ns, 20% less than comparable earlier products), and low current consumption by the circuit (Icc = 2.5mA). This makes it possible to build inverter control circuits that are more precise and have lower power consumption. The new photocouplers allow operation at a maximum operating ambient temperature of 125 degrees C. This simplifies the thermal design of systems in hot environments. With these features, the PS9332L and PS9332L2 allow more compact inverter systems for applications such as industrial machinery and solar power systems.