Digi-Key Corporation Expands Cree Product Line to Include Gallium Nitride (GaN) HEMTs for Microwave Applications
Digi-Key Corporation and Cree, Inc. announced today that Digi-Key is now stocking Cree’s Gallium Nitride (GaN) HEMT transistors for general purpose microwave applications. Digi-Key’s portfolio of Cree offerings encompasses SiC power components, SiC MESFETs, high-brightness and high-power LEDs, and now, GaN HEMT transistors.
Cree’s GaN HEMT general-purpose transistors, in power levels ranging from 10W to 90W, are ideal for microwave applications that require high efficiency, multi-octave bandwidth performance. These transistors offer high frequency performance to 6GHz, high gain, and low parasitic capacitance within small package footprints. This enables smaller, lighter, and more energy efficient systems, often with fewer amplifier components, than required with other microwave transistor technologies.
“We are pleased that Digi-Key is stocking Cree GaN HEMT transistors,” said Jim Milligan, Cree’s director of RF and microwave products. “Digi-Key has the distribution expertise and industry channels to help accelerate the adoption of our GaN HEMT technology.”
Digi-Key President and COO Mark Larson commented, “Relied upon by engineering and purchasing communities for product selection and availability, Digi-Key is committed to providing its customers with the latest and most sought-after technologies. To that end, we are very pleased to make Cree’s GaN HEMT transistors available to our customers.”
